ANTIREFLECTION COATING AND EXPOSURE METHOD

• Main Authors: BOONTARIKA THUNNAKART, WATANABE YOKO, OZAWA KEN, MATSUZAWA NOBUYUKI
• Format: Patent
• Language: English
• Published: 19.04.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

PROBLEM TO BE SOLVED: To provide an antireflection coating using an immersion lithography technology, capable of sufficiently reducing reflectivity at the interface between a resist layer and a silicon semiconductor substrate even if exposure light diagonally enters one layer. SOLUTION: A 2-layer structure antireflection coating is formed between a resist layer and a silicon oxide film formed on the surface of a silicon semiconductor substrate, and is used for exposing the resist layer by an exposure system whose numerical aperture is 0.93-1.2, with a wavelength of 190-195 nm. N1, k1, d1, n2, k2, d2satisfy an equation ä(n1-n10)/(n1m-n10)}2+ä(k1-k10)/(k1m-k10)}2+ä(d1-d10)/(d1m-d10)}2+ä(n2-n20)/(n2m-n20)}2+ä(k2-k20)/(k2m-k20)}2+ä(d2-d20)/(d2m-d20)}2≤1, when a specified set is selected as sets of value [n10, k10, d10, n20, k20, d20], with a complex index of the refraction N1, N2of an upper layer and a lower layer, constituting the antireflection coating, as N1=n1-k1i, N2=n2-k2i and film thickness of the upper layer and lower layer as d1, d2. COPYRIGHT: (C)2007,JPO&INPIT