METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: TOCHISHITA SHOJI, HARUKI TORU, UEHARA TADAO, NISHIHARA KENJI, SEKIFUKU KIYOTAKA
• Format: Patent
• Language: English
• Published: 12.04.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To secure an aperture ratio required for detecting the finish point of dry etching processing by enlarging the area of the aperture of a resist pattern for dry etching without reducing a region area for arranging a device chip region. SOLUTION: A positive photosensitive resist is coated on the whole main surface of a semiconductor wafer 2 including the device chip region 4, a peripheral edge region 6, and an element non-formation region 8, so that the resist pattern is formed by performing exposure processing and development processing, and the dry etching processing is performed with the resist pattern as a mask. In the above process, an additional exposure region 10 arranged in a part or the whole of the element non-formation region 8 is also exposed in the exposure processing. Then the development processing is performed so as to fully remove the positive photosensitive resist in the additional exposure region 10. COPYRIGHT: (C)2007,JPO&INPIT