SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the deterioration of the detrap retention characteristic of a nonvolatile memory element, and also to provide its manufacturing method. SOLUTION: On an insulation film 14 wherein plugs 16 are formed, an interlayer insulation f...

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Bibliographic Details
Main Author TORII KATSUHIRO
Format Patent
LanguageEnglish
Published 05.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the deterioration of the detrap retention characteristic of a nonvolatile memory element, and also to provide its manufacturing method. SOLUTION: On an insulation film 14 wherein plugs 16 are formed, an interlayer insulation film 17 consisting of a silicon-rich oxide film and an interlayer insulation film 18 consisting of TEOS film are formed. Then, a trench 19 is so formed as to penetrate the interlayer insulation films 17 and 18, and an interconnection 20a is so formed as to be embedded in the trench 19. In other words, a first interconnection layer is a buried interconnection embedded in the interlayer insulation films 17 and 18. Moreover, the interlayer insulation film 17 formed in the same layer as the interconnections 20a-20c which constitute the first interconnection layer is a silicon-rich oxide film having a property of trapping dopants such as water and hydrogen. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050271745