SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

• Main Authors: MIN HEE, HIROSHIMA YASUSHI, ISHIHARA RYOICHI
• Format: Patent
• Language: English
• Published: 29.03.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that ensures a high performance thin film transistor within a small variation of property in 3D semiconductor device formation. SOLUTION: This method comprises a concave formation process for forming a concave (123) serving as a starting point in crystallizing a semiconductor film on a substrate (11) having a monocrystal or an approximate monocrystal at least at either side; a semiconductor film formation process for forming a semiconductor film (130) on the above substrate with the concave formed; a thermal treatment process for performing thermal treatment on the above semiconductor film; a thermal treatment process for forming an approximate monocrystal particle (13) where the above starting point is an approximate center, a patterning process for forming a transistor area (133) as a source area, drain area, and channel area by patterning the above semiconductor film; and a device formation process for forming a thin transistor by forming a gate insulating film (14) and a gate electrode (15) on the above transistor area. In the device formation process, a thin film transistor is formed in a direction different from that of the crystal face (111) of the monocrystal or approximate monocrystal of the above substrate. COPYRIGHT: (C)2007,JPO&INPIT