METHOD FOR READING NONVOLATILE MEMORY CELL

PROBLEM TO BE SOLVED: To correctly read an NROM cell storing two bits. SOLUTION: This method includes a step for changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step in...

Full description

Saved in:
Bibliographic Details
Main Authors SHAPPIR ASSAF, LUSKY ELI, COHEN GUY
Format Patent
LanguageEnglish
Published 01.03.2007
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To correctly read an NROM cell storing two bits. SOLUTION: This method includes a step for changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step includes: a step for determining a history read reference level of a group of history cells associated with a group of memory cells of a nonvolatile memory cell array; a step for allowing correct reading of the group of history cells; a step for selecting a memory read reference level according to the first read reference level, and a step for reading the nonvolatile memory array cells. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060222247