POLYMER COMPOUND, RESIST MATERIAL AND PATTERN FORMATION METHOD
PROBLEM TO BE SOLVED: To provide a resist material excellent in transmittance to exposure light of 300 nm or shorter wavelength as well as substrate adhesion and developer dissolvability. SOLUTION: This resist material is adaptable to microfabrication technology and the base resin thereof comprises...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
01.03.2007
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a resist material excellent in transmittance to exposure light of 300 nm or shorter wavelength as well as substrate adhesion and developer dissolvability. SOLUTION: This resist material is adaptable to microfabrication technology and the base resin thereof comprises a polymer compound containing recurring units composed of a first unit containing a sulfonamide group with same or different substituents being a hydrogen atom, a 1-20C linear, branched or cyclic alkyl group, a fluoroalkyl group or a protecting group released by an acid, and a second unit comprising a styrene derivative having on the benzene ring a fluorine atom, 1-20C linear, branched or cyclic fluorinated alkyl group or an alkoxy group with a specified substituent. COPYRIGHT: (C)2007,JPO&INPIT |
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Bibliography: | Application Number: JP20060211829 |