POLYMER COMPOUND, RESIST MATERIAL AND PATTERN FORMATION METHOD

• Main Authors: ENDO MASATAKA, SASAKO MASARU, UEDA MITSURU, IIMORI HIROKAZU, KISHIMURA SHINJI, FUKUHARA TOSHIAKI
• Format: Patent
• Language: English
• Published: 01.03.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To provide a resist material excellent in transmittance to exposure light of 300 nm or shorter wavelength as well as substrate adhesion and developer dissolvability. SOLUTION: This resist material is adaptable to microfabrication technology and the base resin thereof comprises a polymer compound containing recurring units composed of a first unit containing a sulfonamide group with same or different substituents being a hydrogen atom, a 1-20C linear, branched or cyclic alkyl group, a fluoroalkyl group or a protecting group released by an acid, and a second unit comprising a styrene derivative having on the benzene ring a fluorine atom, 1-20C linear, branched or cyclic fluorinated alkyl group or an alkoxy group with a specified substituent. COPYRIGHT: (C)2007,JPO&INPIT