BISMUTH-BASED FERROELECTRIC THIN FILM AND MANUFACTURING METHOD THEREOF

• Main Authors: ISHIKAWA KIYOSHI, TAKEUCHI YOSHIYUKI, KUMAGAI TOMOYA
• Format: Patent
• Language: English
• Published: 15.02.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a manufacturing method of a bismuth-based ferroelectric element that has a small number of crystal voids and a thin film of minute and fine crystal particles. SOLUTION: The manufacturing method of the bismuth-based ferroelectric element comprises a first electrode fo...