BISMUTH-BASED FERROELECTRIC THIN FILM AND MANUFACTURING METHOD THEREOF

• Main Authors: ISHIKAWA KIYOSHI, TAKEUCHI YOSHIYUKI, KUMAGAI TOMOYA
• Format: Patent
• Language: English
• Published: 15.02.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a manufacturing method of a bismuth-based ferroelectric element that has a small number of crystal voids and a thin film of minute and fine crystal particles. SOLUTION: The manufacturing method of the bismuth-based ferroelectric element comprises a first electrode formation process for forming a lower electrode on a substrate; a thin-film formation process for forming a ferroelectric thin film having a bismuth laminar structure on the lower electrode; and a second electrode formation process for forming an upper electrode on the ferroelectric thin film. The thin-film formation process has a thin-film precursor formation process for coating the lower electrode with a coating liquid for forming a ferroelectric thin film and forming the ferroelectric thin-film precursor; a first heating process for performing the heat treatment of the ferroelectric thin-film precursor obtained from the thin-film precursor formation process at 600°C-700°C at a temperature rise speed of 6°C/s-20°C/s for 1-60 minutes; and a second heating process and a third one for performing heat treatment after the first heating process. COPYRIGHT: (C)2007,JPO&INPIT