INSPECTION METHOD OF SEMICONDUCTOR AND INSPECTION DEVICE OF SEMICONDUCTOR

• Main Authors: MATSUI MIYAKO, TAKAGUCHI MASANARI
• Format: Patent
• Language: English
• Published: 15.02.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To provide an inspection device for detecting the flaw of a semiconductor and measuring the dimension of the flaw of the semiconductor as a technique for inspecting a wafer on the way of a semiconductor manufacturing process without applying damage to the inspection device by irradiation with an electron beam, and also to provide an inspection method of the semiconductor. SOLUTION: The relation of an inspection condition with pattern data and charge voltage is preliminarily stored. Wafer data including depth data is input when an inspection recipe is formed and the inspection condition applying the damage is made impossible to set from the wafer data. Alternatively, in a case that the input inspection condition is made preferential to perform inspection, a pattern having the possibility of causing damage is searched to set and display a non-inspection region. Further, when the damage is detected on a damage monitor, an alarm is displayed to stop the irradiation of the pattern with the electron beam. Furthermore, a pattern causing the damage is specified to be fed back to the receipe. COPYRIGHT: (C)2007,JPO&INPIT