PLASMA PROCESSING APPARATUS

• Main Authors: IZAWA MASARU, MIYAKE MASATOSHI, YOKOGAWA KATANOBU, KOBAYASHI HIROYUKI
• Format: Patent
• Language: English
• Published: 08.02.2007
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of removing contamination particles at the upper portion of a workpiece during discharge or before/after the discharge. SOLUTION: The apparatus comprises a processing chamber 1; a processing gas supply means for supplying processing gas into the chamber 1; an antenna electrode 3 for supplying high-frequency power into the chamber for generating plasm; an evaluation means 6 for exhausting the inside of the chamber; a placement electrode 4 for placing and holding the workpiece in the chamber; and a DC power supply 38 for supplying negative potential to the antenna electrode 3. COPYRIGHT: (C)2007,JPO&INPIT