METHOD FOR SEPARATION OF METALLIC CARBON NANOTUBE, METHOD FOR PRODUCING THIN FILM OF SEMICONDUCTING CARBON NANOTUBE, THIN-FILM TRANSISTOR AND ITS PRODUCTION METHOD, ELECTRONIC ELEMENT, AND METHOD OF PRODUCING THE ELEMENT

PROBLEM TO BE SOLVED: To provide a method capable of efficiently separating a metallic carbon nanotube from a semiconducting one by a simple process, and to provide a method of producing the thin film of semiconducting carbon nanotube using the above separation method. SOLUTION: The method of separa...

Full description

Saved in:
Bibliographic Details
Main Author KO KOKIN
Format Patent
LanguageEnglish
Published 08.02.2007
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a method capable of efficiently separating a metallic carbon nanotube from a semiconducting one by a simple process, and to provide a method of producing the thin film of semiconducting carbon nanotube using the above separation method. SOLUTION: The method of separating the metallic carbon nanotube from the semiconducting one comprises dispersing a mixture of the metallic and semiconducting carbon nanotubes in a liquid, selectively bonding a particle to the metallic carbon nanotube, and then removing the particle-bonded metallic carbon nanotube. The thin film of the obtained semiconducting carbon nanotube is formed on a substrate and further, by using the above thin film as a channel material, a carbon nanotube TFT (thin-film transistor) is produced. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050219845