SEMICONDUCTOR MEMORY DEVICE AND GENERATING METHOD OF ROM (READ ONLY MEMORY) DATA PATTERN

PROBLEM TO BE SOLVED: To contrive the stabilization of forming of a memory cell diffusion mask pattern and the improvement of an yield thereof, by facilitating the formation of configuration of the memory cell diffusion mask pattern. SOLUTION: A 2-bit adjacent memory cell transistor is constituted o...

Full description

Saved in:
Bibliographic Details
Main Authors OTA KIYOTO, SUMIMOTO YOSHIHIKO
Format Patent
LanguageEnglish
Published 01.02.2007
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:PROBLEM TO BE SOLVED: To contrive the stabilization of forming of a memory cell diffusion mask pattern and the improvement of an yield thereof, by facilitating the formation of configuration of the memory cell diffusion mask pattern. SOLUTION: A 2-bit adjacent memory cell transistor is constituted of a diffusion mask pattern 5 while the diffusion mask patterns 5 are arrayed on a memory cell array 1, and the source common wiring 8 of the memory cell formed of the diffusion mask patterns 5 is wired through a metal wiring. The memory cell diffusion mask pattern is constituted of 2-bit rectangular diffusion mask pattern, and the source common wiring is wired by the metal wiring in such a manner whereby the formation of configuration of the memory cell diffusion mask pattern is facilitated. Further, the pattern continuity of the memory diffusion mask pattern used as a real memory is maintained to improve the pattern forming accuracy of the diffusion mask pattern for the real memory, and to contrive the improvement of the yield thereof. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050211345