BURIED HETEROSTRUCTURE DEVICE HAVING INCORPORATED WAVEGUIDE GRATING PRODUCED BY SINGLE STEP MOCVD

• Main Authors: CORZINE SCOTT W, BOUR DAVID
• Format: Patent
• Language: English
• Published: 25.01.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS

PROBLEM TO BE SOLVED: To provide an optoelectronic device comprising a growth surface, a growth mask, an optical waveguide core mesa, and a cladding layer, which allow a buried heterostructure to be formed easily, and incorporate such a structure. SOLUTION: An optoelectronic device comprises a growth surface, a growth mask, an optical waveguide core mesa, and a cladding layer. The growth mask 132 is located on a semiconductor surface, and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa 140 is located in the growth window, and has a trapezoidal cross-sectional shape. The cladding layer 160 covers the optical waveguide core mesa, and extends over at least part of the growth mask. Such a device is produced by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by means of micro-selective area growth at a first temperature, and covering the optical waveguide core mesa with a cladding material at a second temperature that is lower than the first temperature. COPYRIGHT: (C)2007,JPO&INPIT