SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a silicon carbide substrate which can be worked at low cost, used for a semiconductor device, and has a relatively low defect density. SOLUTION: A composite structure (16) is provided including a silicon carbide epitaxial layer. The epitaxial layer is vertically disp...

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Bibliographic Details
Main Authors ELASSER AHMED, ROWLAND LARRY B
Format Patent
LanguageEnglish
Published 18.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a silicon carbide substrate which can be worked at low cost, used for a semiconductor device, and has a relatively low defect density. SOLUTION: A composite structure (16) is provided including a silicon carbide epitaxial layer. The epitaxial layer is vertically disposed and includes at least four regions for demarcating the respective interface surfaces. The regions are characterized by the respective impurity concentrations. The impurity concentrations change beyond the interface surfaces, and at least one impurity exceeds a concentration of 1×1017cm-3in each of the regions. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060176143