SEMICONDUCTOR DEVICE

• Main Authors: MOCHO YOSHINOBU, MIKAWA TAKUMI
• Format: Patent
• Language: English
• Published: 11.01.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To prevent the bridging between the lower electrodes of a capacitor, caused by scratches to an insulating film generated by CMP, when forming a contact plug. SOLUTION: A semiconductor device comprises the lower electrode 105 formed on a substrate; the capacitor 108 comprising a capacity insulating film and an upper electrode 107; and the contact plug 104 for electrically connecting the substrate to the lower electrode 105. In the semiconductor device, a plurality of lower electrodes 105 are arranged in rows, the center position of adjacent lower electrodes 105 is shifted by distance t1 in a direction orthogonally crossing the row direction for arrangement, and the center position of the lower electrodes 105 and that of the contact plug 104 in the lower electrodes 105 are shifted by a distance t2 in a direction (y direction) orthogonally crossing the row direction so that they are separated from the adjacent lower electrodes 105 for arrangement. Additionally, the sum of the distance t1 and distance t2 is made larger than 1/2 of the dimensions of the lower electrodes 105, in a direction orthogonally crossing the row direction. COPYRIGHT: (C)2007,JPO&INPIT