NITRIDE SEMICONDUCTOR LASER HAVING LATERAL P-N JUNCTION FORMED BY SINGLE ELOG GROWTH

PROBLEM TO BE SOLVED: To obtain a laser structure, capable of shutting up injection current and of providing improved properties for threshold gains and the like for VCSEL and improved properties in the contact resistance and in injection current and the like for an end-surface emitting laser. SOLUT...

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Bibliographic Details
Main Authors CORZINE SCOTT W, BOUR DAVID
Format Patent
LanguageEnglish
Published 28.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To obtain a laser structure, capable of shutting up injection current and of providing improved properties for threshold gains and the like for VCSEL and improved properties in the contact resistance and in injection current and the like for an end-surface emitting laser. SOLUTION: A vertical quantum well nitride laser is manufactured by ELOG (epitaxial lateral growth) method. The vertical quantum well is formed by deposition on a surface (a), which is a growth end-surface in the lateral direction. Meanwhile, the lateral p-n junction is formed by a single ELOG-MOCVD (metallorganic chemical vapor deposition) step. The vertical quantum well can be made to set either [11-20] orientation by growth from the surface (a), or [0001] orientation by growth from a surface (c). The vertical quantum well can be used for both VCSEL and the end-surface emitting laser. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060165757