METHOD OF MANUFACTURING MOS FIELD EFFECT TRANSISTOR HAVING MULTIPLE CHANNELS, AND MOS FIELD EFFECT TRANSISTOR HAVING MULTIPLE CHANNELS MANUFACTURED BY THE SAME

• Main Authors: SUK SUNG DAE, LEE SUNG-YOUNG, KIN DOIN, KIM SUNG-MIN
• Format: Patent
• Language: English
• Published: 28.12.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method of manufacturing a MOS field effect transistor having multiple channels. SOLUTION: A method of manufacturing a MOS field effect transistor having multiple channels comprises: a step of sequentially forming a first material layer 20 and a semiconductor layer 30 that have etching selectivity on a semiconductor substrate 10; a step of forming semiconductor layers 30b having at least a pair of exposed peripheries by means of an etching process using a mask layer, a buried material layer formation process, and a planarization process; a step of forming a gate insulating layer 92a and a gate electrode layer 90 that surround the semiconductor layer 30b having the exposed peripheries; and a step of forming a first ion implantation region 94 by using the gate electrode layer 90 as a mask and forming a second ion implantation region 98 by using an insulating spacer 96 as a mask, thereby obtaining source/drain regions. COPYRIGHT: (C)2007,JPO&INPIT