PLASMA PROCESSING DEVICE

• Main Authors: ARAMAKI TORU, YOKOGAWA KATANOBU, KANEKIYO TADAMITSU, TSUBONE TSUNEHIKO
• Format: Patent
• Language: English
• Published: 28.12.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a plasma processing device or a plasma processing method capable of carrying out processing with high accuracy. SOLUTION: The plasma processing device is equipped with a processing chamber which is arranged in a vacuum chamber to form plasma, a specimen pad which is arranged at a lower part inside the processing chamber to be mounted with a specimen as an object of processing on its upper surface, an electrode which is arranged inside the specimen pad and applied with a first high-frequency power for adjusting the surface potential of the specimen, a flowing path which is arranged inside the specimen pad to enable a heat exchange medium to flow through it, and a control unit of controlling the temperature of the cooling medium flowing through the path. The plasma processing device processes the specimen using the plasma formed inside the processing chamber while the first high-frequency power is applied, and the control unit starts controlling the temperature of the heat exchange medium so as to make it equal to the predetermined value based on information as to the high-frequency power before the first high-frequency power is applied. COPYRIGHT: (C)2007,JPO&INPIT