SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a charge leak of a capacitor provided at a memory cell, and also, capable of increasing the effective area of the capacitor while suppressing a variations in the capacity value of the capacitor. SOLUTION: A separation tre...

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Bibliographic Details
Main Author KUBO SHUNJI
Format Patent
LanguageEnglish
Published 21.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a charge leak of a capacitor provided at a memory cell, and also, capable of increasing the effective area of the capacitor while suppressing a variations in the capacity value of the capacitor. SOLUTION: A separation trench 40 is formed on an SOI layer 3. A separation insulating film 4 is formed in the separation trench 40. An opening 41 for exposing the inner wall of the separation trench 40 is formed at the separation insulating film 4. The opening 41 reaches an insulating layer 2. A lower electrode (an impurity diffused layer 24) and a dielectric layer 21 of a capacitor 102 are extended to the inner wall of the separation trench 40 exposed to the opening 41. At least a part of an upper electrode 22 is embedded into the opening 41. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050167939