METHOD FOR FORMING ZINC OXIDE FILM

• Main Authors: AKIYAMA TOSHIO, TAKAMATSU YUKICHI
• Format: Patent
• Language: English
• Published: 14.12.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for safely forming a zinc oxide film having a crystal of high quality on the surface of various substrates with the use of a CVD technique. SOLUTION: The method for forming the zinc oxide film on the surface of the substrate comprises the steps of: evaporating a raw material containing dimethylzinc or diethylzinc dissolved in an organic solvent; supplying the gas to a CVD apparatus; and simultaneously supplying a gas containing an oxidizing gas to the CVD apparatus. Alternatively, the method for forming the zinc oxide film on the surface of the substrate comprises alternately supplying a vaporized gas of dimethylzinc or diethylzinc, and the gas containing the oxidizing gas, to the CVD apparatus. COPYRIGHT: (C)2007,JPO&INPIT