SEMICONDUCTOR PHOTOSENSOR DEVICE

• Main Authors: SUZUNAGA HIROSHI, TAKIBA YUKIKO
• Format: Patent
• Language: English
• Published: 07.12.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor photosensor device having the spectrometric sensitivity characteristic near the visual sensitivity, and also to provide an information apparatus comprising the same photo-sensor. SOLUTION: The semiconductor photosensor device comprises a silicon substrate, a first photo-diode and a second photo-diode formed on the silicon substrate, a first amplifying circuit for amplifying an optical current from the first photo-diode, a second amplifying circuit having almost the identical amplifying characteristic as the first amplifying circuit formed on the silicon substrate to amplify an optical current from the second photo-diode, an infrared transmitting filter provided on the second photo-diode to relatively attenuates the visible light element among the incident light for the infrared light element, and a subtraction circuit formed on the silicon substrate to output a difference between the output of the first amplifying circuit and the output of the second amplifying circuit. In the semiconductor photosensor device, the first photo-diode and the second photo-diode are arranged on the silicon substrate in the manner that the centers of these photo-diodes are substantially symmetrical. COPYRIGHT: (C)2007,JPO&INPIT