INHOMOGENOUS ION INJECTION DEVICE AND METHOD

PROBLEM TO BE SOLVED: To provide an inhomogenous ion injection device and an inhomogenous ion injection method in which dopant ions are injected with different doses into different regions of a wafer. SOLUTION: The inhomogenous ion injection device includes a wide ion beam generator which forms wide...

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Bibliographic Details
Main Authors JIN SEUNG WOO, ROUH KYOUNG BONG, LEE MIN YONG
Format Patent
LanguageEnglish
Published 16.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an inhomogenous ion injection device and an inhomogenous ion injection method in which dopant ions are injected with different doses into different regions of a wafer. SOLUTION: The inhomogenous ion injection device includes a wide ion beam generator which forms wide ion beams composed of a plurality of wide ion beams overlapping respectively on a plurality of regions of at least two places or more out of the total regions of a wafer, and a wafer rotating device which rotates the wafer in a fixed direction while the wide ion beams formed by the wide ion generator are irradiated. At least one wide ion beam out of the plurality of wide ion beams has at least a dose different from any other wide ion beams. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060000610