CLEANING LIQUID AND METHOD FOR FORMING METALLIC PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME

• Main Authors: BAEK KUI-JONG, HONG CHANGKI, LIM JUNG HUN, KIM SANG-YONG, CHOI SANG-JUN, SHIM WOO-GWAN, LEE HYO-SAN, PARK IM-SOO, KIN GENTAKU, HAN WOONG, KIM SUNG BAE, LEE SANG WON
• Format: Patent
• Language: English
• Published: 26.10.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a cleaning liquid and a method for forming a metallic pattern of a semiconductor device. SOLUTION: The cleaning liquid contains acetic acid, inorganic acid, a fluorine compound, and deionized water, and the method for forming a metallic pattern uses the same. The cleaning liquid may further contain a corrosion inhibitor, a chelating agent, or a combination of these. For the metallic pattern formation method, a metal film composed of Ru is formed on a substrate. Part of the metal film is dry-etched to form a metal pattern. Using a compound liquid containing acetic acid, inorganic acid, a fluorine compound, and deionized water, the metal film pattern is cleaned to remove etching by-product layers around the metal film pattern. When an oxide film pattern is used as an etching mask to form a metal film pattern, the oxide film pattern is formed and then, the cleaning liquid is used to remove the etching by-product layers around the oxide film pattern before dry-etching the metal film. COPYRIGHT: (C)2007,JPO&INPIT