METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Author: MARUSAKI TSUNEJI
• Format: Patent
• Language: English
• Published: 12.10.2006
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

PROBLEM TO BE SOLVED: To prevent exposure fault of a conductor material, excess grinding, etc. by detecting with good precision a conductor material which constitutes a non-through electrode being exposed to the rear surface by polishing the rear surface which counters the principal surface of a semiconductor substrate, in which the non-through electrode is formed towards the interior of the principal surface in the thinning/through-electrode formation process of a method of manufacturing the semiconductor device. SOLUTION: A polishing structure 1 is produced by bonding a semiconductor substrate 2 in which the non-through electrode 7 is formed towards the interior from the principal surface 5, an anisotropic conduction film 3, and the conductive support 4. If the conductor material which constitutes the non-through electrode 7 by the polishing of the polishing surface 6 is exposed to the front surface of the polishing surface 6, a voltage will be impressed so that the current may flow, and the exposure of the conductor material is detected by the variation of the electric resistance value in the thickness direction of the semiconductor substrate 2. COPYRIGHT: (C)2007,JPO&INPIT