PROCESS FOR FABRICATING SEMICONDUCTOR LASER

• Main Author: IWAYAMA AKIRA
• Format: Patent
• Language: English
• Published: 07.09.2006
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To suppress increase in threshold voltage of a semiconductor laser having a ridge type resonator. SOLUTION: Entire surface layer 106b of a first metal layer composed of nickel (Ni) is deposited by about 10 nm. An inventive anti-oxidation film S is formed on a second metal layer 106c of gold (Au) having a thickness of about 200 nm and located above a p-type contact layer 105b by lift-off method employing photolithography. The anti-oxidation film S is formed of SiO2having a thickness of about 70 nm along the flat stripe top surface Σ of a resonator. Stripe width is about 1,500 nm on the flat top surface Σ of the p-type contact layer 105b. Subsequently, density distribution of nickel (Ni) and gold (Au) is inverted by heat treatment to obtain an inverted distribution. Heat treatment is performed in an ordinary pressure treatment atmosphere of nitrogen 98% and oxygen 2% at a treatment temperature of 550°C with a treatment time of 18 min for example. COPYRIGHT: (C)2006,JPO&NCIPI