SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a start-up circuit capable of minimizing the change of a trip point taking part in power-on time. SOLUTION: A semiconductor memory device is provided with: an internal power supply voltage generating circuit (6) generating internal power supply voltage (VCCP) by conv...

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Bibliographic Details
Main Author KIM MYONG-JAE
Format Patent
LanguageEnglish
Published 07.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a start-up circuit capable of minimizing the change of a trip point taking part in power-on time. SOLUTION: A semiconductor memory device is provided with: an internal power supply voltage generating circuit (6) generating internal power supply voltage (VCCP) by converting external power supply voltage (VCC); a bias voltage supply circuit (8) generating bias voltage (VBIAS) clamped at the prescribed level by applying the external power supply voltage; and a start-up circuit (10) having an initializing means (26) for generating start-up signals (VCCH) using a differential amplifier circuit for turning the internal power supply voltage to one of a voltage source and differential input and the bias voltage to the other of the differential input, and for initializing the output terminal of the differential amplifier circuit, while being operation-controlled by the bias voltage. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20060148669