SUBSTRATE FOR FORMATION OF (111)-ORIENTED PZT-TYPE DIELECTRIC FILM AND (111)-ORIENTED PZT-TYPE DIELECTRIC FILM FORMED BY USING THE SUBSTRATE

PROBLEM TO BE SOLVED: To provide a substrate for the formation of a (111)-oriented PZT-type dielectric film capable of forming on a silicon substrate a (111)-oriented PZT-type dielectric film with a high purity and no compositional discrepancy by application of the least necessary quantity of heat,...

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Bibliographic Details
Main Authors KOBAYASHI TAKESHI, ICHIKI MASAAKI, MAEDA RYUTARO
Format Patent
LanguageEnglish
Published 03.08.2006
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SEMICONDUCTOR DEVICES
SLAG
TREATMENT OF NATURAL STONE
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Summary:PROBLEM TO BE SOLVED: To provide a substrate for the formation of a (111)-oriented PZT-type dielectric film capable of forming on a silicon substrate a (111)-oriented PZT-type dielectric film with a high purity and no compositional discrepancy by application of the least necessary quantity of heat, to provide a high-purity (111)-oriented PZT-type dielectric film obtained by utilizing such substrate, and to provide a method for producing a high-purity (111)-oriented PZT-type dielectric film by utilizing such substrate. SOLUTION: The substrate for the formation of the (111)-oriented PZT-type dielectric film is one obtained by heat-treating a substrate material composed of a silicon substrate and a titanium film and a platinum film successively formed thereon, wherein an orientation control layer containing titanium oxide is formed on the platinum film. The (111)-oriented PZT-type dielectric film is obtained by utilizing the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050009755