COMPOUND SEMICONDUCTOR DEVICE

• Main Authors: KANEMURA MASAHITO, NISHI SHINKO
• Format: Patent
• Language: English
• Published: 27.07.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a compound semiconductor device for achieving a stable operation at a high voltage for a long time by suppressing an increase in a leakage current of a gate electrode. SOLUTION: In the gate electrode 101 formed by applying Schottky junction onto a compound semiconductor layer 100, the increase in the leakage current of the gate electrode is suppressed by providing a diffusion preventing layer made of TixW1-xN (0<x<1) for suppressing the metal of a low resistance metal layer 42 into the compound semiconductor layer 100, between an Ni layer 41 forming a Schottky barrier to the compound semiconductor layer 100 and the low resistance metal layer 42. COPYRIGHT: (C)2006,JPO&NCIPI