STORAGE DEVICE, ITS MANUFACTURING METHOD, AND MEMORY

PROBLEM TO BE SOLVED: To provide a storage device which is capable of reducing a recording current by spin transfer through a process of forming a memory layer as a sufficiently thin continuous film by a stable technique in a manufacturing process. SOLUTION: The storage device 10 has a configuration...

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Main Authors OISHI TAKENORI, YAMAMOTO TETSUYA, HOSOMI MASAKATSU, HIGO YUTAKA, OBA KAZUHIRO, YAMANE ICHIYO, BESSHO KAZUHIRO, OMORI HIROYUKI, KANO HIROSHI
Format Patent
LanguageEnglish
Published 27.07.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a storage device which is capable of reducing a recording current by spin transfer through a process of forming a memory layer as a sufficiently thin continuous film by a stable technique in a manufacturing process. SOLUTION: The storage device 10 has a configuration wherein the memory layer 5 holding information by the magnetization state of a magnetic material, a non-magnetic layer 4, and a magnetization stationary layer 3 are laminated together, information is written in the memory layer 5 through a process of making a current flow in the direction of lamination, and a mixed layer region 7 composed of a ferromagnetic material and a non-magnetic material is formed near an interface between the memory layer 5 and its adjoining layer opposite to the non-magnetic layer 4. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050005514