MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT MADE OF NITRIDE-BASED COMPOUND SEMICONDUCTOR

• Main Author: HATA TOSHIO
• Format: Patent
• Language: English
• Published: 20.07.2006
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a highly reliable light emitting element made of a nitride-based compound semiconductor, which enables electrodes having good ohmic properties to be formed surely on the exposed surface of the laminating structure made of the nitride-based compound semiconductor from whose surface its substrate is removed by a laser, and is lowered resultantly in its driving voltage. SOLUTION: In the manufacturing method of the light emitting element made of the nitride-based compound semiconductor, the semiconductor laminating structure including a plurality of layers (5, 6) made of the nitride-based compound semiconductor is formed on a substrate (10), and the substrate is so peeled from the semiconductor laminating structure by utilizing a laser irradiation as to clean the exposed surface (81) of the semiconductor laminating structure exposed by the peeling of the substrate and as to form electrodes on the cleaned exposed surface. COPYRIGHT: (C)2006,JPO&NCIPI