CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCER FABRICATED WITH EPITAXIAL SILICON MEMBRANE

PROBLEM TO BE SOLVED: To provide capacitive micromachined ultrasound transducer (cMUT) and method of manufacturing the same. SOLUTION: A capacitive micromachined ultrasound transducer (cMUT) cell (10) is provided. This cMUT cell (10) includes a lower electrode (18). Furthermore, the cMUT cell (10) i...

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Bibliographic Details
Main Authors SMITH LOWELL SCOTT, LOGAN JOHN ROBERT, MILLS DAVID MARTIN, TIAN WEING, FORTIN JEFFREY BERNARD
Format Patent
LanguageEnglish
Published 13.07.2006
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Summary:PROBLEM TO BE SOLVED: To provide capacitive micromachined ultrasound transducer (cMUT) and method of manufacturing the same. SOLUTION: A capacitive micromachined ultrasound transducer (cMUT) cell (10) is provided. This cMUT cell (10) includes a lower electrode (18). Furthermore, the cMUT cell (10) includes a diaphragm (22) disposed adjacent to the lower electrode (18) such that a gap having a first gap width is formed between the diaphragm and the lower electrode (18), wherein the diaphragm (22) comprises one of a first epitaxial layer (40) or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer (40). COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050367304