CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCER FABRICATED WITH EPITAXIAL SILICON MEMBRANE
PROBLEM TO BE SOLVED: To provide capacitive micromachined ultrasound transducer (cMUT) and method of manufacturing the same. SOLUTION: A capacitive micromachined ultrasound transducer (cMUT) cell (10) is provided. This cMUT cell (10) includes a lower electrode (18). Furthermore, the cMUT cell (10) i...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
13.07.2006
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide capacitive micromachined ultrasound transducer (cMUT) and method of manufacturing the same. SOLUTION: A capacitive micromachined ultrasound transducer (cMUT) cell (10) is provided. This cMUT cell (10) includes a lower electrode (18). Furthermore, the cMUT cell (10) includes a diaphragm (22) disposed adjacent to the lower electrode (18) such that a gap having a first gap width is formed between the diaphragm and the lower electrode (18), wherein the diaphragm (22) comprises one of a first epitaxial layer (40) or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer (40). COPYRIGHT: (C)2006,JPO&NCIPI |
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Bibliography: | Application Number: JP20050367304 |