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Summary:PROBLEM TO BE SOLVED: To provide a method capable of achieving superior power distribution impedance reduction combined with improved voltage response to accommodate higher IC switching speeds, and to provide such a device and method of making the device. SOLUTION: A power core comprises at least one embedded surface-mount-technology (SMT) discrete chip capacitor layer comprising at least one embedded SMT discrete chip capacitor 410, and at least one planar capacitor laminate 320. At least one planar capacitor laminate 320 serves as a low inductance path to supply a charge to at least one embedded SMT discrete chip capacitor 410, and the embedded SMT discrete chip capacitor 410 is connected in parallel to the planar capacitor laminate 320. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050368189