SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with the gate interconnect line of a voltage drive transistor arranged on a LOCOS oxide film, capable of restraining dielectric breakdown from occurring around the edges of the LOCOS oxide film, and has a long service life, an...

Full description

Saved in:
Bibliographic Details
Main Author SUZUKI MIKIMASA
Format Patent
LanguageEnglish
Published 29.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with the gate interconnect line of a voltage drive transistor arranged on a LOCOS oxide film, capable of restraining dielectric breakdown from occurring around the edges of the LOCOS oxide film, and has a long service life, and to provide a method of manufacturing the semiconductor device at a low cost. SOLUTION: The semiconductor device 100 is equipped with the gate interconnect line gh of the voltage drive transistor, the one end of the gate interconnect line gh is arranged on the LOCOS oxide film 3, and a second oxide film 6a is formed under the gate interconnect line gh that traverses the edge of the LOCOS oxide film 3 so as to cover the edge. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20040361958