GAS FOR PLASMA REACTION

• Main Authors: SEKIYA AKIRA, MASE TAKANOBU, SUGIMOTO TATSUYA
• Format: Patent
• Language: English
• Published: 15.06.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide gas for plasma reaction that forms a fluorocarbon film for preventing corrosive gas from being hardly generated in heat treatment after film formation, and also forms an appropriate pattern shape with a high selection ratio and at a high etching speed to a semiconductor material, and also to provide: a film-formation method of the fluorocarbon film using the gas for plasma reaction; a dry etching method; and a method for manufacturing a semiconductor device having at least one process from a dry etching process, a CVD process, and an ashing process. SOLUTION: The gas for plasma reaction is made of an unsaturated fluorinated carbon compound, where the amount of compound containing nitrogen atoms is 100 wt. ppm or smaller. The film formation method of the fluorocarbon film by the CVD method and the dry etching method use the gas for plasma reaction. The method for manufacturing the semiconductor device has at least one process from the dry etching process, the CVD process, and the ashing process using the gas for plasma reaction. COPYRIGHT: (C)2006,JPO&NCIPI