HEAT TREATMENT METHOD OF SEMICONDUCTOR SUBSTRATE

• Main Authors: HORAI MASATAKA, AKATSUKA MASANORI
• Format: Patent
• Language: English
• Published: 25.05.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To accurately measure the temperature of the rear face of a substrate by preventing the transfer of heat from the substrate to a temperature sensor as well as to prevent the contamination and damages to the substrate, by measuring the temperature of the rear face of the substrate by a non-contact method by means of the temperature sensor. SOLUTION: By irradiating the surface 11a of the semiconductor substrate 11 with the light from a light source 13 which is arranged above the surface of a semiconductor substrate and is controlled by a controller 16, the semiconductor substrate is heat-treated. In this heat treatment, the temperature of the rear face of the semiconductor substrate is measured by a non-contact method by means of the temperature sensor arranged below the rear face of the semiconductor substrate. Thereafter, the temperature of the front face of the semiconductor substrate is estimated from the measured temperature of the rear face, the thickness and thermal conductivity of the semiconductor substrate, and heat-up and cool-down rates of the rear face of the semiconductor substrate. The output of the light source is so controlled by the controller that the thus estimated temperature of the front face may change at a specified heat-up rate and cool-down rate. COPYRIGHT: (C)2006,JPO&NCIPI