DIELECTRIC THIN FILM, THIN FILM CAPACITOR ELEMENT, AND METHOD OF MANUFACTURING THIN FILM CAPACITOR ELEMENT

• Main Authors: HORINO KENJI, UCHIDA KIYOSHI, SAIDA HITOSHI
• Format: Patent
• Language: English
• Published: 18.05.2006
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CABLES; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

PROBLEM TO BE SOLVED: To provide a dielectric thin film in which a temperature coefficient of a dielectric constant is small, the dielectric constant is high, a leakage property is good and a manufacturing is easy. SOLUTION: The present invention relates to the dielectric thin film, wherein a composition formula is expressed by (Ba1-xSrx)yTiO3(0.18≤x≤0.45, 0.96≤y≤1.04), and a peak intensity ratio I(100)/I(110) is 0.02 to 2.0, when a peak intensity of a diffraction line of a (100) plane in an X-ray diffraction chart is set to I(100), and when a peak intensity of a diffraction line of a (110) plane in the X-ray diffraction chart is set to I(110). According to this invention, there can be realized such properties that an absolute value of the temperature coefficient of the dielectric constant is less than 600 ppm/°C, the dielectric constant at 25°C is ≥200, and a leakage current density at 25°C is ≤1×10-6A/cm2. COPYRIGHT: (C)2006,JPO&NCIPI