DIVISION METHOD OF WAFER

• Main Authors: IIZUKA KENTARO, NAGAI YUSUKE
• Format: Patent
• Language: English
• Published: 27.04.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

PROBLEM TO BE SOLVED: To provide the division method of a wafer whereby a wafer formed of two or more prescribed lines in a lattice shape on the surface is divided into respective chips along the prescribed lines so that they can be supported with a predetermined gap. SOLUTION: The division method of a wafer comprises a transmutation formation process for forming a transmutation layer in the inside of a wafer by irradiating a laser beam with permeability to a wafer along a prescribed division line, a wafer support process for sticking one field of a wafer to the holding tape which is attached to an annular frame and is contracted by external stimulus, a wafer fracture process for fracturing a wafer along the division scheduled line which imparts external force to the wafer stuck on the holding tape so that the transmutation layer may be formed, and a chip gap formation process for making a contraction domain contract by imparting an external stimulus to the contraction domain between the inner circumference of the annular frame in the holding tape to which the fractured wafer is stuck and the domain on which the wafer is stuck. COPYRIGHT: (C)2006,JPO&NCIPI