METHOD OF CALCULATING THREE-DIMENSIONAL DISTRIBUTION OF IMPURITY

• Main Author: TSUTSUI MASASHI
• Format: Patent
• Language: English
• Published: 27.04.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method with which the three-dimensional distribution of an impurity can be calculated accurately and easily for simulating a device, such as fine element etc,. SOLUTION: The two-dimensional distributions of the impurity in the cross section (A-A' cross section) of the three-dimensional structure of a MOSFET in the channel width direction and in the cross section (B-B' cross section) of the structure in the channel length direction are calculated by performing two-dimensional process simulation. Then the three-dimensional distribution of the impurity is calculated by adding both two-dimensional distributions of the impurity, while the two-dimensional distribution of the impurity in the cross section in the channel width direction is successively moved in the directions, in which the interfaces 9a and 9b are extended between an element region and an element separating region 2; and at the same time, the two-dimensional distribution of the impurity in the cross section in the channel lengthwise direction is successively moved in a directions, in which the edges 10c and 10d of a gate oxidized film 3 are extended. COPYRIGHT: (C)2006,JPO&NCIPI