MANUFACTURING METHOD OF THIN FILM TRANSISTOR DISPLAY PANEL

PROBLEM TO BE SOLVED: To simplify a manufacturing process and also shorten process time. SOLUTION: A gate line having a gate electrode 124 and a gate insulation film 140 are formed on an insulation substrate 110; and a silicon layer, an impurity silicon layer, and conductive layers 151 and 154, are...

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Bibliographic Details
Main Authors RYU HYE-YOUNG, KIN SHOSHU, KIN SHOKO, LEE WOO-GEUN
Format Patent
LanguageEnglish
Published 20.04.2006
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Summary:PROBLEM TO BE SOLVED: To simplify a manufacturing process and also shorten process time. SOLUTION: A gate line having a gate electrode 124 and a gate insulation film 140 are formed on an insulation substrate 110; and a silicon layer, an impurity silicon layer, and conductive layers 151 and 154, are laminated thereon. Thereafter, a photosensitive film pattern having a first part with a first thickness on the channel region of a transistor and a second part thicker than the first thickness on a wiring region corresponding to a data line and a drain electrode is formed on the conductor layer. The conductor layer is etched with the photosensitive film pattern serving as a mask to remove the first part and expose the conductor layer of the channel region. Then, the silicon layer and the impurity silicon layer corresponding to other regions are etched, and part of the conductor layer corresponding to the channel region is etched to remove the conductor layer and the impurity silicon layer located on the channel region. Thereafter, the second part is removed. Then, a protective film covering the data line and having a contact hole for exposing the drain electrode is formed, and a pixel electrode connected with the drain electrode is formed. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050019463