METHOD FOR MANUFACTURING PLASTIC-MADE CONTAINER WITH GAS BARRIER PROPERTY

• Main Authors: SHIBATA AYUMI, SAKAMOTO HISASHI
• Format: Patent
• Language: English
• Published: 30.03.2006
• Subjects: ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; CONVEYING; DIFFUSION TREATMENT OF METALLIC MATERIAL; HANDLING THIN OR FILAMENTARY MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PACKAGES; PACKAGING ELEMENTS; PACKING; PERFORMING OPERATIONS; STORING; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a method for manufacturing a plastic container with high gas barrier properties which cannot be obtained with a conventional plastic container having a barrier layer formed of a single-layer thin film mainly consisting of a silicon compound. SOLUTION: In the method for manufacturing the plastic container with high gas barrier properties having a thin film of gas barrier properties mainly comprising silicon oxides SiOxnCynon an inner surface of a plastic container body, a plurality of layers of thin films 2a, 2b-2n of gas barrier properties mainly comprising silicon oxides are manufactured on the inner surface of the plastic container body 1 by the plasma chemical vapor deposition method using raw material gases containing organo-silicone compounds. In this situation, the degree of oxidation of each layer is successively increased by increasing the plasma discharge output step by step from the first layer 2a to the uppermost layer 2n during the film deposition of each layer to deposit a compound thin film 2 with gas barrier properties mainly comprising silicon oxides. COPYRIGHT: (C)2006,JPO&NCIPI