MANUFACTURING METHOD OF CNT-CONTAINING WIRING MATERIAL AND TARGET MATERIAL FOR SPUTTERING

• Main Authors: SAKAGUCHI HARUNORI, MANO SATORU
• Format: Patent
• Language: English
• Published: 23.03.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a target material for homogeneously dispersing carbon nanotubes (CNT) into a metal material that becomes a wiring pattern, improving the electric conductivity of the wiring pattern, and homogeneously dispersing and mixing CNT into a metal thin film by sputtering. SOLUTION: In a manufacturing method of a wiring material, a CNT-containing metal layer 13 is formed on the surface of a base material 8 comprising an insulating material, and the wiring pattern is formed by pattern etching the metal layer 13. In the method, the CNT-containing metal layer 13 is formed with a sputtering method. The CNT and Cu are simultaneously sputtered to form the CNT-containing metal layer 13, so that the CNT can be homogeneously mixed into the Cu, and interface resistance between the CNT and the Cu can be reduced to improve the electric conductivity of the wiring. As a target member 10 for sputtering a target material where the CNT contains, the Cu is employed. COPYRIGHT: (C)2006,JPO&NCIPI