HIGH FREQUENCY SWITCH CIRCUIT UNIT

• Main Authors: HIDAKA KENICHI, MASUMOTO YASUYUKI, WATANABE KOJI, NAKATSUKA TADAYOSHI, TARA KATSUJI, YASUDA EIJI
• Format: Patent
• Language: English
• Published: 16.02.2006
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

PROBLEM TO BE SOLVED: To enable driving without increasing a control signal input terminal for a shunt FET even when there is the shunt FET for securing isolation, with a miniaturized chip size. SOLUTION: Using diodes D1-D6 constituted of Schottky junctions, a diode logic circuit OR1 capable of selecting the highest voltage among control signal input terminals CTL1-CTL3 is integrally formed on a compound semiconductor substrate on which FET1-FET6 for switching and securing isolation in an MESFET stage are formed. The FET1-FET3 for switching in the MESFET stage are controlled by the voltages of the plurality of control voltage input terminals CTL1-CTL3. Also, the FET4-FET6 for securing isolation in the MESFET stage are controlled by the OR voltage being output from the diode logic circuit. Further, by connecting the above diode logic circuit OR1 to a middle connection point of the FETs, the potential of the middle connection point of the FETs is fixed without adding a power supply terminal. COPYRIGHT: (C)2006,JPO&NCIPI