NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a nitride-based compound semiconductor light-emitting device in which the adhesion between a conductive substrate and an ohmic electrode is improved to make the device highly reliable, and to provide a method of manufacturing the same. SOLUTION: The nitride-based com...

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Bibliographic Details
Main Author HATA TOSHIO
Format Patent
LanguageEnglish
Published 16.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a nitride-based compound semiconductor light-emitting device in which the adhesion between a conductive substrate and an ohmic electrode is improved to make the device highly reliable, and to provide a method of manufacturing the same. SOLUTION: The nitride-based compound semiconductor light-emitting device includes a supporting substrate, a first ohmic electrode formed on the supporting substrate, a bonding metal layer formed on the first ohmic electrode, a second ohmic electrode formed on the bonding metal layer, a nitride-based compound semiconductor layer formed on the second ohmic electrode, a transparent electrode formed on almost all of the upper surface of the semiconductor layer, and an ohmic electrode formed on the back side surface of the supporting substrate. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050196066