MANUFACTURING METHOD OF FIELD EFFECT ORGANIC TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method for manufacturing a field effect organic transistor which is improved in on/off ratio, low of threshold voltage, and stable of characteristic for an extended period. SOLUTION: The field effect organic transistor comprises a source electrode 15, drain electro...

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Bibliographic Details
Main Authors NAKAGAWA TAIRA, NAKAMURA SHINICHI
Format Patent
LanguageEnglish
Published 16.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a field effect organic transistor which is improved in on/off ratio, low of threshold voltage, and stable of characteristic for an extended period. SOLUTION: The field effect organic transistor comprises a source electrode 15, drain electrode 14, gate electrode 12, gate insulating layer 13, and organic semiconductor layer 16. The process for forming the organic semiconductor layer 16 includes a first process in which an organic semiconductor whose melting point is 350°C or lower is film-formed in a liquid-phase process, and then cooled from a room temperature or higher to lower than the room temperature T1, and a second process in which it is raised from the temperature T1to the room temperature. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20040232381