ION IMPLANTATION DEVICE FOR UNIFORMALIZING TRANSISTOR PARAMETER AND ION IMPLANTATION METHOD USING SAME

PROBLEM TO BE SOLVED: To provide an ion implantation device capable of improving unevenness on a wafer causing generation of difference of transistor parameters, and to provide an ion implantation method using the same. SOLUTION: The ion implantation device is provided with a first quadrupole type m...

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Bibliographic Details
Main Authors JIN SEUNG-WOO, ROUH KYOUNG-BONG, LEE MIN-YONG
Format Patent
LanguageEnglish
Published 16.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an ion implantation device capable of improving unevenness on a wafer causing generation of difference of transistor parameters, and to provide an ion implantation method using the same. SOLUTION: The ion implantation device is provided with a first quadrupole type magnetic pole assembly (21) focusing ion beams emitted from an ion beam source, an X/Y scanner (22) deflecting the ion beams passed through the first quadrupole type magnetic pole assembly (21) in an X-axis direction and a Y-axis direction, a second quadrupole type magnetic pole assembly (23) contracting or expanding the ion beams passed through the X/Y scanner (22) in a vertical or a lateral direction, and a collimator (24) rotating the ion beams by synchronizing with the second quadrupole type magnetic pole assembly (23). The ion beams passed through the collimator (23) are implanted in the wafer. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20040381425