METHOD FOR MANUFACTURING GRANULAR CRYSTAL

• Main Authors: KITAHARA NOBUYUKI, ARIMUNE HISAO, SUGAWARA MAKOTO, TAKAHASHI MORISATO
• Format: Patent
• Language: English
• Published: 09.02.2006
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method capable of stably preparing a granular crystal having high crystallinity and also capable of continuously manufacturing the granular crystal having a uniform size at a low cost in the method for manufacturing the granular crystal such as a granular silicon crystal. SOLUTION: In the method for manufacturing the granular crystal by discharging/falling down a molten liquid 4 of a crystal material in a granulated state from a nozzle part 3 of a crucible 1, and at the same time, cooling/solidifying a granulated molten liquid 8 during falling, the molten liquid 4 is discharged by applying pressure 6 to the molten liquid 4, and also the pressure is increased at the start of discharge and lowered thereafter. The granular crystal having a uniform size is stably prepared by forming a stable cylindrical molten liquid 7, and also accelerating the division of the cylindrical molten liquid 7 to the granulated molten liquid 8 and suppressing the formation of large-sized granulated molten liquid 8. COPYRIGHT: (C)2006,JPO&NCIPI