BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: ATSUMI KENJI, KAWAMOTO TAKEYOSHI
• Format: Patent
• Language: English
• Published: 19.01.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To prevent a short circuit between an emitter lead-out electrode and a base layer caused by a bridging phenomenon when silicide layers are formed on surfaces of the emitter take-out electrode and the base layer. SOLUTION: A semiconductor device has a heterojunction bipolar transistor. In the device, a collector layer, a base layer, and an emitter layer are sequentially laminated on a semiconductor substrate; an emitter take-out electrode having overhanging part is formed on the upper part of the emitter layer; a first insulating layer is formed inside the overhanging part of the emitter take-out electrode; and silicide layers are formed on surfaces of the emitter lead-out electrode and the base layer. A second insulating layer is formed on the rear surface of the overhanging part of the emitter take-out electrode spaced from the upper surface of the base layer. A third insulating layer is formed on the side surface of the overhanging part of the emitter take-out electrode. COPYRIGHT: (C)2006,JPO&NCIPI