RESIST POLYMER AND RESIST COMPOSITION

PROBLEM TO BE SOLVED: To provide a resist polymer which exhibits an excellent resolution, a small line edge roughness and produces little defects and particles in DUV (deep UV) excimer laser lithography, electron beam lithography or the like. SOLUTION: The resist polymer is obtained by reacting a sp...

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Bibliographic Details
Main Authors UEDA TERUSHI, MOMOSE AKIRA, OTAKE ATSUSHI, NAKAMURA MASA
Format Patent
LanguageEnglish
Published 19.01.2006
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Summary:PROBLEM TO BE SOLVED: To provide a resist polymer which exhibits an excellent resolution, a small line edge roughness and produces little defects and particles in DUV (deep UV) excimer laser lithography, electron beam lithography or the like. SOLUTION: The resist polymer is obtained by reacting a specific substance such as 2-etyl-1,3,3-trimethylbicyclo[2.1.1]heptan-2-yl-mathacrylate. 2-ethyl-1,7,7-trimethylbicyclo[2.1.1]heptan-2-yl-mathacrylate, 2-ethylbicyclo[2.1.1]heptane-exo-2-yl-mathacrylate and 2-ethyl-ethyltricyclo[5.2.1.02,6]decane-exo-2-yl-mathacrylate which renders a structural characteristic that the bond between an ester oxygen and a carbon at a specific location is cleaved by oxygen and an aliphatic ring structure is eliminated with a specific substance such as 2- or 3-cyano-5-norbonyl methacrylate and 1-methacryloyloxy-3-hydroxy adamantyl. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20040196504