CMOS IMAGE SENSOR

PROBLEM TO BE SOLVED: To provide a CMOS image sensor which prevents lowering of characteristics due to picture element leak current. SOLUTION: PN junction reverse leak current of a photodiode and pn junction reverse leak current of an MOS transistor are offset by deciding the conductivity type of th...

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Bibliographic Details
Main Authors SHIOURA TETSUO, OMI TOSHIHIKO
Format Patent
LanguageEnglish
Published 12.01.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a CMOS image sensor which prevents lowering of characteristics due to picture element leak current. SOLUTION: PN junction reverse leak current of a photodiode and pn junction reverse leak current of an MOS transistor are offset by deciding the conductivity type of the MOS transistor connected to the photodiode with a pn junction, and noise component is reduced as added to a signal charge due to photoelectric conversion. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20040191070